Power semiconductors based on silicon carbide (SiC) have many advantages such as high efficiency, high power density, high withstand voltage and high reliability, creating opportunities to realize new applications and promote technological innovation in charging stations. Recently, Infineon Technologies AG recently announced a cooperation with Infineon, a leader in China's new energy vehicle charging market. Infineon will provide Infineon with industry-leading 1200 V CoolSiC™ MOSFET power semiconductor devices to improve the efficiency of electric vehicle charging stations.
Dr. Peter Wawer, President of Infineon's Zero Carbon Industrial Power Division, said: "The cooperation between Infineon and Infineon in the field of electric vehicle charging solutions will provide excellent system-level technology solutions for the local electric vehicle charging industry. It It will significantly improve charging efficiency, speed up charging, and create a better user experience for electric vehicle owners."
Qiu Tianquan, President of Infineon China, said: “By cooperating with Infineon, which has been continuously improving in the field of SiC products for more than 20 years and has strong integrated technology capabilities, Infineon will adopt the most advanced product processes and design solutions. Continue to consolidate and maintain its technological leadership in the industry. We can also set a new benchmark for the charging efficiency of new energy vehicle DC charging solutions, thereby creating more convenience and unique value for customers and promoting the development of the electric vehicle charging industry. healthy growth."
Due to its high power density, SiC is suitable for developing high-performance, lightweight and compact charging solutions, which is particularly beneficial for superchargers and ultra-compact wall-mounted DC charging piles. SiC technology can increase the efficiency of electric vehicle charging stations by 1% compared to traditional silicon technology, thereby reducing energy consumption and operating costs. Taking a 100 kW charging station as an example, this means saving 1 kWh of electricity, saving 270 euros in annual costs, and reducing 3.5 tons of carbon emissions. This will greatly promote the application of SiC power devices in electric vehicle charging modules.
As one of the first SiC power semiconductor manufacturers to use trench gate technology for transistors, Infineon has introduced advanced designs that help improve the reliability of charging solutions. These devices feature high threshold voltages and simplify gate drive. CoolSiC MOSFET technology has passed the marathon stress test and the gate voltage jump stress test before being launched on the market, and is regularly monitored after the launch to ensure the highest gate reliability.
By using Infineon's 1200 V CoolSiC MOSFET, Infineon's 30 kW DC charging module can achieve a wide constant power range, high power density, minimal electromagnetic radiation and interference, high protection performance and high reliability. This allows it to not only meet the fast charging needs of most electric vehicles, but also achieve 1% greater efficiency than other solutions on the market. This helps to significantly reduce energy consumption and carbon emissions, reaching world-leading levels.
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