On June 18, the Munich Regional Court in Germany ruled in favor of Infineon Technologies in two further patent infringement cases involving gallium nitride (GaN) technology (one based on a patent and the other on a utility model).
These cases involved the unauthorized use by the Chinese company Innoscience of Infineon's patented gallium nitride technology. According to the ruling, the court prohibits Innoscience from manufacturing, selling, and promoting further infringing products in Germany. Furthermore, the court ordered Innoscience to pay damages to Infineon.
This ruling marks the third and fourth defeat for Innoscience in a series of related lawsuits, each finding that Innoscience's products infringed Infineon's patents. Previously, courts and regulatory agencies in Germany and the United States had repeatedly ruled that Innoscience's products infringed Infineon's intellectual property rights. These include a preliminary ruling in Germany on August 1, 2025, and a ruling by the full committee of the U.S. International Trade Commission (ITC) on May 7, 2026, that Innoscience infringed an Infineon patent in the field of gallium nitride (GaN) technology. Infringement proceedings surrounding other Infineon patents are currently ongoing in the U.S. and Germany.
GaN plays a crucial role in achieving high-performance, energy-efficient power systems and is widely used in renewable energy systems, data centers, industrial automation, and electric vehicles (EVs).
Johannes Schoiswohl, Senior Vice President and Head of the GaN Systems business line at Infineon Technologies, stated, “This ruling fully demonstrates the value of our GaN patent portfolio and reaffirms our commitment to upholding intellectual property rights and maintaining fair competition in the market.”
Infineon continues to solidify its position as a leading vertically integrated manufacturer (IDM) in the GaN market, possessing the industry’s broadest intellectual property portfolio (covering approximately 450 GaN patent families). Infineon will continue to drive innovation and advancements in semiconductor technology to address the key challenges facing the world in decarbonization and digital transformation.
Tags：