One of the industry’s giants, Infineon is proud to present its newest electronic advancement, the 800V CoolMOS P7 series of 800V MosFETs. This newly unleashed technology is practically based on superjunction innovation like no other.
The group consists of various 800 V CoolMOS P7 MOSFETs and will be accessible in twelve R DS (on) classes and in six bundles to completely address the necessities of target applications.
Items with R DS (on) of 280 mω, 450 mω, 1400 mω and 4500 mω can be requested at this point.
According to reports, this series is specifically for low power SMPS applications, predominantly focussing on fly back topologies which are normally found in applications like connector, LED lighting, sound, modern and helper power.
The 800 V CoolMOS P7 arrangement presents to 0.6% productivity pick up which makes an interpretation of into 2 to 8 °C lower MOSFET temperature contrasted with the CoolMOS C3 or to contender parts tried in run of the mill fly back applications.
As per the company's statements, this new reference comes about because of a mix of enhanced gadget parameters: including the lessening of more than half in E oss and Q g, and a diminished C iss and C oss. The enhanced execution empowers higher force thickness outlines through lower exchanging misfortunes and better DPAK R DS(on) items. By and large, this helps clients to spare BOM costs and diminish get together endeavors.
With the incorporated Zener Diode, it essentially enhances ESD toughness, therefore decreasing ESD related creation yield misfortunes.
The MOSFET is anything but difficult to drive and to plan in because of its V (GS)th of 3 V and the littlest V GS(th) variety of just ±0.5 V which takes into account lower driving voltage and lower exchanging misfortunes.
Tags：
MOSFET, Infineon